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Photon recycling in double heterostructures. II: The case of non-perfect optical confinementENDERS, P.Physica status solidi. B. Basic research. 1986, Vol 137, Num 2, pp 701-708, issn 0370-1972Article
A numerical investigation of model effective-mass Hamiltonians and the associated wavefunction-matching conditions for abrupt heterojunctionsCSAVINSZKY, P; ELABSY, A. M.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1010-1014, issn 0268-1242Article
Pulsed 1-watt heterojunction bipolar transistors at 35 GHzADLERSTEIN, M. G; ZAITLIN, M. P; HOKE, W et al.IEEE microwave and guided wave letters. 1993, Vol 3, Num 5, pp 145-147, issn 1051-8207Article
High-frequency characteristics of inverted mode heterojunction bipolar transistorsNADIR DAGU; WAI LEE; SHEILA PRASAD et al.IEEE electron device letters. 1987, Vol 8, Num 10, pp 472-474, issn 0741-3106Article
Operation of the Si/CoSi2/Si heterostructure transistorHENSEL, J. C.Applied physics letters. 1986, Vol 49, Num 9, pp 522-524, issn 0003-6951Article
Comparison of compositionally graded to abrupt emitter-base junctions used in the heterojunction bipolar transistorENQUIST, P. M; RAMBERG, L. P; EASTMAN, L. F et al.Journal of applied physics. 1987, Vol 61, Num 7, pp 2663-2669, issn 0021-8979Article
Comprehensive study of AuMn p-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistorsDUBON-CHEVALLIER, C; GAUNEAU, M; BRESSE, J. F et al.Journal of applied physics. 1986, Vol 59, Num 11, pp 3783-3786, issn 0021-8979Article
Gain and frequency response of a graded-base heterojunction bipolar phototransistorROY, B. C; CHAKRABARTI, N. B.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 7, pp 1482-1490, issn 0018-9383Article
A p-n-p AlGaAs heterojunction bipolar transistor for high-temperature operationFROST, M. S; RICHES, M; KERR, T et al.Journal of applied physics. 1986, Vol 60, Num 6, pp 2149-2153, issn 0021-8979Article
Electrical and optical bandgaps of GexSi1-x strained layersJAIN, S. C; POORTMANS, J; IYER, S. S et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 12, pp 2338-2343, issn 0018-9383Article
Simulation of influence of undoped spacer layers in Si/SiGe-HBTs on transit frequencyROSSBERG, M; SCHWIERZ, F; ALBERS, J. N et al.Electronics Letters. 1993, Vol 29, Num 1, pp 85-87, issn 0013-5194Article
parameter-extraction method for heterojunction bipolar transistorsMAAS, S. A; TAIT, D.IEEE microwave and guided wave letters. 1992, Vol 2, Num 12, pp 502-504Article
Bidirectional bistability in n-p-n Si/Si1-xGex/Si structuresSHEN, G. D; XU, D. X; WILLANDER, M et al.IEEE electron device letters. 1988, Vol 9, Num 9, pp 453-456, issn 0741-3106Article
Observation of nonequilibrium holes in Si-SiGe unipolar transistor structuresLIU, H. C; BUCHANAN, M; BARIBEAU, J.-M et al.Applied physics letters. 1993, Vol 62, Num 9, pp 988-990, issn 0003-6951Article
Electron transport in submicron AlGaAs/GaAs heterostructure bipolar transistors with a modified collector structureERSHOV, M; SVYATCHENKO, A.Acta physica Polonica. A. 1990, Vol 77, Num 2-3, pp 233-235, issn 0587-4246Article
A new fabrication technology for AlGaAs/GaAs HEMT LSI's using InGaAs nonalloyed ohmic contactsKURODA, S; HARADA, N; KATAKAMI, T et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2196-2203, issn 0018-9383, 8 p., 1Article
Breakdown behavior of GaAs/AlGaAs HBT'sCHEN, J. J; GUANG-BO GAO; JEN-INN CHYI et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2165-2172, issn 0018-9383, 8 p., 1Article
Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFET'sNGUYEN, L. D; TASKER, P. J; RADULESCU, D. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2243-2248, issn 0018-9383, 6 p., 1Article
Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flowTHORNTON, R. L; MOSBY, W. J; CHUNG, H. F et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2156-2164, issn 0018-9383, 9 p., 1Article
High-speed and large noise margin tolerance E/D logic gates with LDD structure DMT's fabricated using selective RIE technologyHIDA, H; TSUKADA, Y; OGAWA, Y et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2223-2230, issn 0018-9383, 8 p., 1Article
Pseudomorphic bipolar quantum resonant-tunneling transistorSEABAUGH, A. C; FRENSLEY, W. R; RANDALL, J. N et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2328-2334, issn 0018-9383, 7 p., 1Article
The development of heterojunction integrated injection logicHAN-TZONG YUAN; HUNG-DAH SHIH; DELANEY, J et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2083-2092, issn 0018-9383, 10 p., 1Article
An analytical current-voltage characteristics model for high electron mobility transistors based on nonlinear charge-control formulationAN-JUI SHEY; KU, W. H.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2299-2306, issn 0018-9383, 8 p., 1Article
Numerical simulation and comparison of Si BJT's and Si1-xGex HBT'sPEJCINOVIC, B; KAY, L. E; TING-WEI TANG et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2129-2137, issn 0018-9383, 9 p., 1Article
A 0.5-μm-gate GaAs/AlGaAs inverted HEMT IC-multiplier and D/A converterNISHI, S; SEKI, S; SAITO, T et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2191-2195, issn 0018-9383, 5 p., 1Article